Catalytic materials are traditionally modified geometrically, therefore by altering the size, shape, and morphology of the material one can control the electronic properties for surface chemistry. However, there is not yet a clear understanding how the change in electronic properties of the catalytic material is correlated to product formation for a heterogeneous product system. Our investigation has been geared toward the relationship of extrinsic characteristics of ultra-thin conductive oxide films adapted in a back-gate field-effect transistor with an active channel in the 20-50nm range. By incorporating catalytic material into a field-effect transistor, electronic properties can be tuned externally. First we need to understand if conductive behavior remains regardless of thickness and temperature. Fabrication of the devices is achieved by sputtering of the target oxide onto the gate insulator, followed by the addition of probing contacts by electron beam deposition. Electrical characterization is performed in a custom probe station under a vacuum chamber with control of the gaseous atmosphere. Initial results show that the thin films in a field-effect transistor exhibit ohmic behavior, thus behaving as an ideal resistor. As well, the device exhibits higher conductivity at elevated temperatures indicating semiconducting behavior. Future work will focus on the effects of the device for heterogeneous systems under reducing, as well as oxidizing, environments.