The introduction of graphene has heralded a plethora of two dimensional electronic devices that have a wide variety of applications. However, graphene's metallic electrical conductivity makes it a poor substitute for semiconductors in such devices. This technology gap has led to renewed interest in developing two dimensional transition metal dichalcogenides, which share a similar crystal structure with graphene but exhibit semiconducting properties. These compounds have been far less explored than their binary counterparts, and provide an opportunity to generate novel functionalities through appropriate cation chemistry. In the Wilson research group, we are experimenting with methods to grow high quality, bulk single crystals of ternary dichalcogenides, such as niobium iridium telluride (NbIrTe4). Specifically, we’re using a process known as Chemical Vapor Transport (CVT) in attempts to grow a crystalline form of NbIrTe4. This method involves experimenting with different transport agents, in an attempt to find a halogen which is suitable to facilitate the growth of NbIrTe4 crystals. Preliminary results show that trials with Iodine as a transport agent, and no transport agent, yield at least 50% NbIrTe4 composition in the form of powder. Unfortunately, our experiments lack repeatability. Similar trials yield different compositions of various elements. Moving forward it will be necessary to identify the parameters that hinder our efforts to replicate trials and try to attain crystal growth from our NbIrTe4 powder.