NdNiO₃ is of particular interest for next-generation electronic device applications as a model for systems with sharp metal-insulator transitions (MITs) near room temperature.  However, electronic characterization of the system has been problematic due to a “drift” effect in the resistance of the material during the finite phase transition.  In this temperature regime, competing metallic and insulating domains settle to thermodynamic equilibrium when a temperature is set.  This results in an increasing/decreasing resistance over time if the system was previously at a lower/higher temperature.  The timescale of these percolations is on the timescale of hours, excluding temperature drift in the apparatus as the cause.  16.5 nm thin films of NdNiO₃ have been grown on (001)-oriented LaAlO₃ substrates by radio-frequency (RF) Magnetron Sputtering.  The films have been structurally characterized by x-ray diffractometry (XRD) and Scanning Tunneling Electron Microscopy (STEM) and found to be epitaxial, pure-phase, and coherently strained to the LaAlO₃ substrate.  Transport characterization confirms a sharp, bulk-like metal-insulator transition near T_MIT =100K, and a hysteretic behavior with temperature.  Hall measurements corrected for the resistive “drift effect” indicate that NdNiO3 transitions from a p-type metal to an n-type insulator across T_MIT.  However, Seebeck measurements taken in the metallic regime have negative values, suggesting n-type conduction.  As Seebeck measurements favor higher energy bands, the results suggest NdNiO₃ to be a multi-band carrier system, with both electron and hole conduction in the metallic regime.