LED’s have the potential to be an efficient source of commercial illumination but the current price of the technology is too high. The high cost is partially due to the use of Indium Tin Oxide (ITO), an expensive, transparent, current spreading thin film necessary to produce light throughout the entire LED device. This is why there is an effort to find another transparent conductive material to replace ITO. ZnO is a potential candidate so it is being synthesized and tested for its conductivity and transparency that seem to be similar to the properties of ITO. But unlike ITO, ZnO can be synthesized in an inexpensive, aqueous, eco friendly process. Our work shows that it is possible to grow ZnO thin films at a low temperature (90C) on substrates that have a crystal structure similar to that of ZnO, which leads to better film development. Gallium nitride LED’s have such a structure and are currently able to successfully have a ZnO film developed on their surface needing an incubation time of only 12 hours under the conditions described. The ZnO films have been demonstrated as current spreading layers in working LED’s and have performed similarly to ITO in effectiveness of spreading the current throughout the material to allow the entire surface to emit light. Ultimately, the green and simple synthesis of ZnO will lead to the availability of LED’s because an inexpensive material will be used in the building of this technology.