Thin film growth is a vital step in the production of solid-state devices such as hard drives.  Microplasma-assisted growth is a burgeoning new field with many promising applications in the realm of thin films.  Here, the use of microplasmas in growing metallic cobalt films was investigated, i.e., the effect of various input parameters such as plasma composition, chamber pressure, and the geometry of the counter electrode.  Samples were grown in a temperature and pressure controlled DC microplasma jet reactor and the resulting composition and morphology of the films were studied using X-ray photoelectron spectroscopy and scanning electron microscopy.  The hydrogen partial pressure in the plasma jet was found to impact oxide formation, while the flow rate of the cobalt-containing precursor had a significant impact on the surface smoothness of the film.