Electronic doping is important in many technologies including computer logic and optoelectronics but is poorly understood across different classes of electronic band structure. This has a direct effect on device materials, such as spintronic dilute magnetic semiconductors (DMS) that rely on hole doping to couple spins in a collective manner. In certain semiconducting systems, such as GaAs, complementary doping is understood and DMS behavior occurs upon concomitant hole doping and transition metal substitution. The extension of this DMS scheme to more ionic systems has not been very successful. Small band gap oxides remain relatively unexplored in this regard, and their study may enhance our understanding of these behaviors. Complex palladium oxides are prime candidates for study as the simple PdO is known to be susceptible to p-type doping. We have explored systems with different topologies of Pd-O square planes to investigate the effect of electronic structure on hole doping, as well as to examine their potential for DMS behavior. Here we report the solid-state preparation of La₂BaPdO₅, Sr₂PdO₃, and CaPd₃O₄, including hole doping and transition metal incorporation, and the characterization of their structural, electronic, and magnetic properties. Magnetic spins are introduced via substitution of Cu²⁺ on the Pd²⁺ site and electronic doping is achieved by replacing a small amount of Pd²⁺ with Li¹⁺. Preliminary measurements on the La₂BaPdO₅ system indicate that while hole doping and spin incorporation are successful, the collective magnetism of DMS remains absent. Further study will help reveal the factors that govern the electronic and magnetic behavior of complex palladium oxides.