In recent years In₂O₃ has garnered much attention within the transparent semiconducting oxide community because of its applications in photovoltaics and opto-electronic devices. It has been in the shadows of its doped form, tin-doped indium oxide, since its discovery, thus, detailed characterizations have not been done. In our work, we investigate the intrinsic electronic properties of In₂O₃, mainly focusing on increasing the electron mobility within the bulk. Using plasma-assisted molecular beam epitaxy (PA-MBE), In­₂O₃ was grown on yttrium-stabilized zirconia (YSZ). While examining the visual data collected from AFM, TEM, and STEM we observed defects develop at island coalescence boundaries. Cross-sectional TEM images of In­₂O₃ thin films revealed these defects promoted threading dislocations along its length. Upon close inspection of indium atoms within the samples using STEM, a shifting of differently ordered indium rows confirmed the presence of antiphase boundaries (APBs). APBs are associated with like-like atomic bonding creating inconsistencies within the lattice which highly restrict electron mobility. As a result, few nucleation sites are sought to reduce the chances of APB formation and to have greater electron mobility. Previous works suggest that growing in an In-rich environment and relatively high temperatures of about 680^oC will produce an In₂O₃ film with the least amount of APBs and consequently the highest electron mobility.