The present investigation examines optical properties and synthesis of partially reduced graphene oxide thin-films. Graphene, one of many allotropes of carbon, is a single layer of carbon atoms arranged in a honeycomb lattice structure. This structure makes graphene two hundred times stronger than steel at one-sixth the weight and can sustain current densities sixteen times higher than that of copper. These properties and characteristics lend themselves to application of graphene in the fields of electronics, optoelectronics and semi-conductors. Partially reduced graphene oxide thin films are fabricated by electrophoretic deposition of a graphene oxide solution onto a silicon wafer substrate. Graphite powder undergoes the Improved Hummer’s Method to create the graphene oxide solution. Electrophoretic deposition (EPD) partially reduces the graphene oxide thin film. Annealing with heat, hydrazine and/or a strong alkaline solution further reduces the partially reduced graphene oxide thin-film. As the functional groups are removed through the reduction of graphene oxide, the electrical conductivity of graphene oxide increases, allowing the application of reduced graphene oxide thin-film in electronic and optoelectronic devices. Optical properties of the partially reduced graphene oxide thin-films are then evaluated. These properties lend themselves to application in semi-conductor devices, photovoltaics and energy storage while this method has potential for cost-effective commercial production of graphene oxide thin films.