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Block copolymers self-assembly is currently being researched for application in nanolithography. Previous research has been done in utilizing Polyhedral Oligomeric Silsesquioxane (POSS) to create a more etch-resistant block. Due to its repulsion with the organic block, there is a decrease in the line-edge roughness, making it more desirable for this lithography purpose. Expanding upon this previous research, the use of Fluorinated Polyhedral Oligomeric Silsesquioxane (FPOSS) was explored. The sequential polymerization of FPOSS with 2,2,2-trifluoroethyl methacrylate using RAFT yielded fluorinated block copolymers. Small angle X-ray scattering experiments were conducted to determine the self-assembly of these polymers.