Before joining the UCSB Materials Department in 2004, Chris G. Van de Walle was a Principal Scientist in the Electronic Materials Laboratory at the Xerox Palo Alto Research Center (PARC). He received his Ph.D. in Electrical Engineering from Stanford University in 1986. He was a postdoctoral scientist at the IBM T. J. Watson Research Center in Yorktown Heights, New York (1986-1988), a Senior Member of Research Staff at Philips Laboratories in Briarcliff Manor, New York (1988-1991), and an Adjunct Professor of Materials Science at Columbia University (1991). Professor Van de Walle develops and employs first-principles computational techniques to model the structure and behavior of materials. He has performed extensive studies of semiconductor interfaces (including the development of a widely used model for band offsets) and of defects and impurities in semiconductors, with particular emphasis on doping problems. In recent years he has been focusing his attention on wide-band-gap semiconductors, nitrides, oxides, on the behavior of hydrogen in materials, and on spin centers for quantum computing. He co-leads IRG-2, “Correlated Electronics”, and his group is actively engaged in studies of efficiency limits in light emitters, novel channel materials for CMOS, transparent conducting oxides, and hydrogen storage materials. He has published over 250 research papers, holds 22 patents, and has given 130 invited and plenary talks at international conferences. Professor Van de Walle is a Fellow of the APS, AVS, AAAS, MRS, and IEEE, as well as the recipient of a Humboldt Award for Senior US Scientist and the David Adler Award from the APS. He has chaired three conferences, was Program Chair for the 27th International Conference on the Physics of Semiconductors in 2004, and co-organized the International Symposium on Materials Issues in Hydrogen Production and Storage at UCSB in 2006.
Phone: (805) 893-7144
Email: vandewalle [at] mrl [dot] ucsb [dot] edu