As the downscaling of silicon electronics reaches fundamental limits, it creates an opportunity for new computing paradigms based upon new material platforms. In this talk, I make the case that strongly correlated oxides, though well-studied, remain one of the most promising material classes for developing the next generation of logic and memory technologies. My talk takes the form of three vignettes, each highlighting a different application of correlated oxides my group is investigating.

In the first part, I will highlight the power and importance of engineering oxygen defects and show how the intentional migration of oxygen can be used for magnetoionic memory devices. In the second section, we will look at how Mott metal-insulator transitions can be leveraged for low-power field-effect transistors and discuss the major hurdles that have impeded their technological progress. Finally, in the third part, I will show how site-selective entropy-stabilization (i.e., extreme configurational disorder on specific lattice sites) can create widely tunable magnetic phase transitions with potential application in magnetocaloric energy harvesting.

Please contact Sylvia:  sylvia [at] mrl [dot] ucsb [dot] edu, for Zoom link and passcode.